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| Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 energy capability guaranteed switching 16.70.3 q High-speed q No secondary breakdown 7.50.2 o3.10.1 s Applications q High-speed q For switching (switching mode regulator) 4.0 high-frequency power amplification 14.00.5 1.40.1 1.30.2 Solder Dip 0.5 +0.2 -0.1 0.80.1 s Absolute Maximum Ratings (Tc = 25C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25C Ta= 25C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 250 30 2 4 10 30 2 150 -55 to +150 Unit V V A A mJ W C C 2.540.25 5.080.5 1 2 3 Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature * L= 5mH, IL= 2A, VDD= 30V, 1 pulse 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) s Electrical Characteristics (Tc = 25C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD= 200V, ID= 2A VGS=10V, R L=100 VDS=10V, VGS= 0, f=1MHz Condition VDS= 200V, VGS= 0 VGS=30V, VDS = 0 ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, I D=1A VDS= 25V, ID=1A IDR= 2A, VGS = 0 220 60 20 10 20 45 90 4.17 62.5 0.5 250 1 1.2 1 -1.6 5 2 Min Typ Max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W Power F-MOS FETs 2SK2538 Area of safe operation (ASO) 100 Non repetitive pulse TC=25C 30 Allowable power dissipation PD (W) PD - Ta 40 (1) TC=Ta (2) Without heat sink (PD=2.0W) 30 (1) 12 EAS - Tj VDD=30V ID=2A Avalanche energy capability EAS (mJ) 10 10 Drain current ID (A) IDP 3 1 t=10ms 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Drain-Source voltage VDS (V) t=100ms DC ID t=1ms 8 20 6 4 10 2 (2) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 0 25 50 75 100 125 150 175 Junction temperature Tj (C) ID - VDS 5 TC=25C VGS=10.0V 9.0V 8.0V ID (A) ID - VGS 5 VDS=10V TC=25C Drain-Source ON-resistance RDS(on) () RDS(on) - ID 5 VGS=10V 4 4 7.0V ID (A) 4 3 6.5V 30W 2 6.0V 5.5V 1 5.0V 3 3 Drain current Drain current 2 2 TC=100C 25C 1 0C 1 0 0 4 8 12 VDS 16 (V) 20 Drain voltage 0 0 2 4 6 8 10 Gate-Source voltage VGS (V) 0 0 1 2 3 4 5 Drain current ID (A) | Yfs | - ID Input capacitance, Output capacitance, Ciss, Coss, Crss (pF) Feedback capacitance 3 VDS=25V TC=25C (S) Ciss, Coss, Crss - VDS 1000 f=1MHz TC=25C 300 Ciss (ns) 100 120 td(on), tr, tf, td(off) - ID VDD=200V VGS=10V TC=25C td(off) 80 | Yfs | 2 100 Forward transadmittance Switching time t 30 Coss 10 60 tf 40 tr 20 1 Crss 3 td(on) 0 0 1 2 3 4 5 Drain current ID (A) 1 0 50 100 150 200 250 Drain-Source voltage VDS (V) 0 0 1 2 Drain current 3 ID (A) 4 5 Power F-MOS FETs 2SK2538 Rth - tP 1000 Notes: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A(2W) and without heat sink (2) PT=10V x 1.0A(10W) and with a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth (C/W) 100 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Pulse width tP (s) |
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